Title:
MULTIPLE QUANTUM DOT DEVICE AND A PRODUCTION METHOD FOR THE DEVICE
Document Type and Number:
WIPO Patent Application WO/2012/060505
Kind Code:
A1
Abstract:
The present invention relates to a multiple quantum dot device and to a production method for the multiple quantum dot device. More specifically, the present invention relates to a multiple quantum dot device comprising: a channel incorporating a plurality of n-type silicon regions and a p-type silicon region formed connected horizontally and vertically by patterning of the upper, silicon layer of a SOI wafer; a plurality of tunnelling barrier gates which locally control the electrical potential within the channel, and of which the ends are positioned on the upper parts, horizontally to the side of an intersecting region that is intersected by the horizontal direction and the vertical direction of the p-type silicon region; a coupling gate which locally controls the electrical potential within the channel, and of which the end is positioned on the upper part between an intersecting region and an intersecting region; a sensor gate which senses the status of quantum dots formed on an intersecting region, and of which the end is positioned in the upper part in the middle of the intersecting region; and an inversion layer gate which regulates the free electron density, and which is formed on the upper part of the p-type silicon region.
Inventors:
CHOI JUNG BUM (KR)
LEE JONG JIN (KR)
LEE JONG JIN (KR)
Application Number:
PCT/KR2010/008392
Publication Date:
May 10, 2012
Filing Date:
November 25, 2010
Export Citation:
Assignee:
NAT UNIV CHUNGBUK IND ACAD (KR)
CHOI JUNG BUM (KR)
LEE JONG JIN (KR)
CHOI JUNG BUM (KR)
LEE JONG JIN (KR)
International Classes:
H01L29/775; H01L21/335
Foreign References:
| KR20080032277A | 2008-04-15 | |||
| KR20010096861A | 2001-11-08 | |||
| JP2003078128A | 2003-03-14 | |||
| KR20020090068A | 2002-11-30 |
Attorney, Agent or Firm:
KIM, Moon Jong et al. (KR)
김문종 (KR)
김문종 (KR)
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Claims: