Title:
MULTIVARIATE SEMICONDUCTOR PRESSURE SENSOR WITH PASSAGEWAY
Document Type and Number:
WIPO Patent Application WO2001046665
Kind Code:
A8
Abstract:
A multivariate semiconductor pressure sensor includes differential pressure sensing elements formed by a polysilicon membrane (14) spanning a sensor cavity (38) formed in a substrate (12). The sensor cavity (38) is in communication with fluid pressure on the back surface of the substrate (12) by way of a fluid passageway (46) that connects an exterior opening in the back surface of the substrate with an interior opening into either the sensor cavity (38) itself or into a feeder cavity (62) that is in fluid communication with the sensor cavity. Deep Reactive Ion Etching (DRIE) can be used to form the fluid passageway (46).
Inventors:
FUNG CLIFFORD D
HARRIS P ROWE
ZHU DEGUANG
HARRIS P ROWE
ZHU DEGUANG
Application Number:
PCT/US2000/034781
Publication Date:
October 11, 2001
Filing Date:
December 20, 2000
Export Citation:
Assignee:
FOXBORO CO (US)
International Classes:
G01L9/00; G01L13/02; (IPC1-7): G01L9/00
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