Title:
N-TYPE DOPED TWO-DIMENSIONAL STRATIFIED BISMUTH OXYHALIDE MATERIAL, AND PREPARATION METHOD THEREFOR AND APPLICATION THEREOF
Document Type and Number:
WIPO Patent Application WO/2023/098902
Kind Code:
A1
Abstract:
An n-type doped two-dimensional stratified bismuth oxyhalide material, and a preparation method therefor and the application thereof, which belong to the technical field of semiconductor photoelectric materials. Bismuth atoms are replaced with carbon atoms, n-type doping is generated on a two-dimensional stratified bismuth oxyhalide material, an n-type doped two-dimensional stratified bismuth oxyhalide material is then prepared, and the photoelectric effect of a resistive device of the material under ultraviolet irradiation can be significantly enhanced; and when a photocarrier density exceeds a specific value, i.e. an ultraviolet irradiation intensity is greater than a specific value, avalanche-type photocurrent multiplication occurs, and when a small operating voltage is applied to the resistive device of the material, a photocurrent such as a photocurrent of an avalanche current magnitude can be generated. The n-type doped two-dimensional stratified bismuth oxyhalide material is a new photoelectric material for detecting ultraviolet light, and has the commercial application value in the application market of ultraviolet photoelectric detection.
Inventors:
WANG HONGDA (CN)
FU MINGHUI (CN)
HOU BINSEN (CN)
YU YI (CN)
ZHAI WENBO (CN)
WENG ZUQIAN (CN)
DOU HONGBIN (CN)
WU CONGCONG (CN)
WU NAN (CN)
MENG WEI (CN)
ZHANG ZHUO (CN)
FU MINGHUI (CN)
HOU BINSEN (CN)
YU YI (CN)
ZHAI WENBO (CN)
WENG ZUQIAN (CN)
DOU HONGBIN (CN)
WU CONGCONG (CN)
WU NAN (CN)
MENG WEI (CN)
ZHANG ZHUO (CN)
Application Number:
PCT/CN2022/136325
Publication Date:
June 08, 2023
Filing Date:
December 02, 2022
Export Citation:
Assignee:
UNIV SHANGHAI TECH (CN)
International Classes:
C30B29/10; C30B25/16; C30B25/18; C30B29/64; H01L31/18
Foreign References:
| CN114150379A | 2022-03-08 | |||
| US20200403111A1 | 2020-12-24 |
Other References:
JIE LI; LEJUAN CAI; JIAN SHANG; YING YU; LIZHI ZHANG: "Giant Enhancement of Internal Electric Field Boosting Bulk Charge Separation for Photocatalysis", ADVANCED MATERIALS, VCH PUBLISHERS, DE, vol. 28, no. 21, 22 March 2016 (2016-03-22), DE , pages 4059 - 4064, XP071816483, ISSN: 0935-9648, DOI: 10.1002/adma.201600301
Attorney, Agent or Firm:
J.Z.M.C. PATENT AND TRADEMARK LAW OFFICE (GENERAL PARTNERSHIP) (CN)
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