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Title:
N-TYPE ORGANIC SEMICONDUCTOR MATERIAL, ORGANIC SEMICONDUCTOR FILM-FORMING COMPOSITION, ORGANIC SEMICONDUCTOR FILM AND METHOD FOR PRODUCING SAME, ORGANIC THIN-FILM TRANSISTOR AND METHOD FOR PRODUCING SAME, AND COMPOUND PRODUCTION METHOD
Document Type and Number:
WIPO Patent Application WO/2019/176634
Kind Code:
A1
Abstract:
Provided are an n-type organic semiconductor material that has better properties and in particular that when used for a transistor exhibits an excellent carrier mobility and a good atmospheric operational stability; an organic semiconductor film-forming composition containing the same; and an organic semiconductor film and an organic thin-film transistor containing the same. The n-type organic semiconductor material is represented by formula (I). (In formula (I), A1 and A2 each independently represent -O-, -N(RN)- or -P(RN)-. B1 to B4 each independently represent -N= or -C(RM)=, provided that at least one is -N=. RN and RM each independently represent a hydrogen atom or a substituent. X1 to X4 each independently represent an oxygen atom or a sulfur atom.)

Inventors:
ASO Yoshio (1-1 Yamadaoka, Suita-sh, Osaka 71, 〒5650871, JP)
IE Yutaka (1-1 Yamadaoka, Suita-sh, Osaka 71, 〒5650871, JP)
MORIYAMA Taichi (3-15, Edobori 1-chome, Nishi-ku, Osaka-sh, Osaka 02, 〒5500002, JP)
KUDO Syun (3-15, Edobori 1-chome, Nishi-ku, Osaka-sh, Osaka 02, 〒5500002, JP)
Application Number:
JP2019/008533
Publication Date:
September 19, 2019
Filing Date:
March 05, 2019
Export Citation:
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Assignee:
OSAKA UNIVERSITY (1-1 Yamadaoka, Suita-shi Osaka, 71, 〒5650871, JP)
ISHIHARA SANGYO KAISHA, LTD. (3-15, Edobori 1-chome Nishi-ku, Osaka-sh, Osaka 02, 〒5500002, JP)
International Classes:
H01L51/30; C07D471/16; H01L21/336; H01L29/786; H01L51/05
Attorney, Agent or Firm:
ASAMURA PATENT OFFICE, P.C. (Tennoz Central Tower, 2-2-24 Higashi-Shinagawa Shinagawa-k, Tokyo 76, 〒1408776, JP)
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