Title:
N-TYPE TUNGSTEN DISELENIDE NEGATIVE-CAPACITANCE FIELD EFFECT TRANSISTOR AND METHOD FOR PREPARING SAME
Document Type and Number:
WIPO Patent Application WO/2023/098047
Kind Code:
A1
Abstract:
Provided in the present invention is a method for preparing an N-type tungsten diselenide negative-capacitance field effect transistor. The method comprises: depositing, on a gate electrode layer, a hafnium zirconium oxide ferroelectric film having a thickness of 19-21 nm; depositing, on the hafnium zirconium oxide ferroelectric film, an aluminum oxide capacitor matching layer having a thickness of 1-3 nm, wherein the thickness of the hafnium zirconium oxide ferroelectric film and the thickness of the aluminum oxide capacitor matching layer are controlled, thereby improving the ferroelectric negative capacitance performance; performing a heat treatment on the hafnium zirconium oxide ferroelectric film and the aluminum oxide capacitor matching layer, so as to improve the ferroelectricity; transferring a tungsten diselenide semiconductor to the aluminum oxide capacitor matching layer; and forming a metal indium source electrode and a metal indium drain electrode on the tungsten diselenide semiconductor. By means of matching power parameters of a tungsten diselenide semiconductor and metal indium, the N-type contact performance is improved, and the sub-threshold swing of the N-type tungsten diselenide negative-capacitance field effect transistor is thus reduced. Further provided in the present invention is an N-type tungsten diselenide negative-capacitance field effect transistor.
Inventors:
ZHANG ZENGXING (CN)
DONG JIANGUO (CN)
DONG JIANGUO (CN)
Application Number:
PCT/CN2022/101200
Publication Date:
June 08, 2023
Filing Date:
June 24, 2022
Export Citation:
Assignee:
SHANGHAI INTEGRATED CIRCUIT MFG INNOVATION CENTER CO LTD (CN)
International Classes:
H01L21/34; H01L21/44; H01L21/443; H01L29/51; H01L29/78
Foreign References:
| CN113871302A | 2021-12-31 | |||
| CN111554737A | 2020-08-18 | |||
| CN111312829A | 2020-06-19 | |||
| JP2008109146A | 2008-05-08 | |||
| US20210313439A1 | 2021-10-07 |
Attorney, Agent or Firm:
SHANGHAI IFUTURE INTELLECTUAL PROPERTY LAW FIRM (CN)
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