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Title:
A NANO ICRYSTALS COPPER MATERIAL WITH SUPER HIGH STRENGTH AND CONDUCTIVITY AND METHOD OF PREPARING THEREOF
Document Type and Number:
WIPO Patent Application WO/2004/040042
Kind Code:
A1
Abstract:
The present invention is a nano meter crystal metal material, in particular, to a nano bicrystals copper material with super high strength and conductivity, and to a method of preparing thereof. High purity polycrystal Cu material is prepared by employing electrolytic deposition method. The microstructure is consisted of grains, size of which are substantially in the order of isometric submicron 300∼1000 nm. In the inside of the grains present high density structures of different oriented bicrystals layers, the same oriented bicrystals layers are parallel to each other, the thickness of the bicrystals layers is from several nano meter to 100 nm, and the length thereof is 100∼500 nm. Compared with the related art, the present invention is excellent in properties. When draw under ambient temperature, the material has a yield strength up to 900 MPa, and the break strength up to 1086 MPa. This super high strength can not be realized under many other methods by the same copper material. At the same time, the conductivity is excellent, and almost the same as the conductivity of the conventional coarse crystal copper material, and the resistance under ambient temperature is 1.75±0.02X10-8&ohm .m, equal to 96%IACS.

Inventors:
LU LEI (CN)
SI XIAO (CN)
SHEN YONGFENG (CN)
LU KE (CN)
Application Number:
PCT/CN2003/000867
Publication Date:
May 13, 2004
Filing Date:
October 16, 2003
Export Citation:
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Assignee:
INST METAL RES CHINESE ACAD SC (CN)
LU LEI (CN)
SI XIAO (CN)
SHEN YONGFENG (CN)
LU KE (CN)
International Classes:
C22C1/00; C25D1/04; (IPC1-7): C25C1/12; C25D1/04; C22F1/08
Foreign References:
CN1389597A2003-01-08
CN1337475A2002-02-27
CN1105398A1995-07-19
Other References:
See also references of EP 1567691A4
None
Attorney, Agent or Firm:
SHENYANG PATENT & TRADEMARK AGENCY ACADEMIA SINICA (Heping District Shenyang, Liaoning 4, CN)
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