NANOCRYSTAL DOPED MATRIXES

Title:

NANOCRYSTAL DOPED MATRIXES

Document Type and Number:

WIPO Patent Application WO2005067524

Kind Code:

A3

Abstract:

The present invention provides matrixes doped with semiconductor nanocrystals. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. The present invention also provides processes for producing matrixes comprising semiconductor nanocrystals.

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Inventors:

PARCE J WALLACE (US)
CHEN JIAN (US)
DUBROW BOB (US)
FREEMAN BILL (US)
SCHER ERIK C (US)
WHITEFORD JEFFERY A (US)

Application Number:

PCT/US2005/001141

Publication Date:

December 14, 2006

Filing Date:

January 13, 2005

Export Citation:

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Assignee:

NANOSYS INC (US)
PARCE J WALLACE (US)
CHEN JIAN (US)
DUBROW BOB (US)
FREEMAN BILL (US)
SCHER ERIK C (US)
WHITEFORD JEFFERY A (US)

International Classes:

B32B1/04; B32B3/02; B32B5/06; C09D5/00; C09D7/61; C09D11/02; C09K11/02; C09K11/08; C09K11/56; C09K11/88; C09K19/00; C30B23/00; G02B6/00; H01J1/62; H01L29/22; G02B3/00; H01L33/50

Foreign References:

US20030226498A1	2003-12-11
US5777433A	1998-07-07
US20030175004A1	2003-09-18

Other References: