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Title:
NANOCRYSTAL DOPED MATRIXES
Document Type and Number:
WIPO Patent Application WO2005067524
Kind Code:
A3
Abstract:
The present invention provides matrixes doped with semiconductor nanocrystals. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. The present invention also provides processes for producing matrixes comprising semiconductor nanocrystals.

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Inventors:
PARCE J WALLACE (US)
CHEN JIAN (US)
DUBROW BOB (US)
FREEMAN BILL (US)
SCHER ERIK C (US)
WHITEFORD JEFFERY A (US)
Application Number:
US2005001141W
Publication Date:
December 14, 2006
Filing Date:
January 13, 2005
Export Citation:
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Assignee:
NANOSYS, INC.
PARCE, J., WALLACE
CHEN, JIAN
DUBROW, BOB
FREEMAN, BILL
SCHER, ERIK, C.
WHITEFORD, JEFFERY, A.
International Classes:
B32B1/04; B32B3/02; B32B5/06; C09D5/00; C09D7/12; C09D11/02; C09K11/02; C09K11/08; C09K11/56; C09K11/88; C09K19/00; C30B23/00; G02B6/00; H01J1/62; H01L29/22; G02B3/00; H01L33/50
Foreign References:
US20030226498A12003-12-11
US5777433A1998-07-07
US20030175004A12003-09-18
Other References:
See also references of EP 1733077A4
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