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Title:
NANOCRYSTAL STRUCTURES
Document Type and Number:
WIPO Patent Application WO2003043810
Kind Code:
A3
Abstract:
A structure including a grating (43) and a semiconductor nanocrystal layer on the grating (43), can be a laser (10). The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals (32) including a Group II-VI, the nanocrystals (32) being distributed in a metal oxide matrix (33). The grating (43) can have a periodicity from 200 nm to 500 nm.

Inventors:
EISLER HANS J (US)
SUNDAR VIKRAM C (US)
WALSH MICHAEL E (US)
KLIMOV VICTOR I (US)
BAWENDI MOUNGI G (US)
SMITH HENRY I (US)
Application Number:
US0236900W
Publication Date:
July 15, 2004
Filing Date:
November 18, 2002
Export Citation:
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Assignee:
MASSACHUSETTS INSTITUTE OF TECHNOLOGY
EISLER, HANS, J.
SUNDAR, VIKRAM, C.
WALSH, MICHAEL, E.
KLIMOV, VICTOR, I.
BAWENDI, MOUNGI, G.
SMITH, HENRY, I.
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
International Classes:
B82B1/00; C30B5/00; G02B6/122; H01L21/20; H01L21/36; H01L29/06; H01L29/20; H01L29/22; H01L29/26; H01S5/12; (IPC1-7): B32B3/02
Foreign References:
US6506342B12003-01-14
US6337117B12002-01-08
Other References:
See also references of EP 1463628A2
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