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Title:
NANOPOROUS OXIDE-BASED ARTIFICIAL SYNAPSE DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2020/055003
Kind Code:
A1
Abstract:
Disclosed in the present invention are a nanoporous oxide-based artificial synapse device and a method of manufacturing same, the device comprising: a substrate; a first electrode disposed on the substrate; a barrier layer disposed on the first electrode; and a second electrode disposed on the barrier layer, wherein the first electrode includes a nanoporous layer formed in an upper region thereof.

Inventors:
WANG GUNUK (KR)
CHOI SANGHYEON (KR)
JANG SEONGHOON (KR)
Application Number:
PCT/KR2019/010834
Publication Date:
March 19, 2020
Filing Date:
August 26, 2019
Export Citation:
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Assignee:
UNIV KOREA RES & BUS FOUND (KR)
International Classes:
H01L29/06; G06N3/063; H01L21/02; H01L21/768
Foreign References:
KR101588980B12016-01-27
KR20180057384A2018-05-30
US20180076387A12018-03-15
KR20160065178A2016-06-08
KR20180093687A2018-08-22
Attorney, Agent or Firm:
BAEK, Dujin et al. (KR)
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