Title:
3C−SIC NANOWHISKER SYNTHESIZING METHOD AND 3C−SIC NANOWHISKER
Document Type and Number:
WIPO Patent Application WO/2003/000965
Kind Code:
A1
Abstract:
A 3C−SiC nanowhisker synthesizing method for producing a 3C−SiC nanowhisker having controlled diameter and length on an Si substrate safely at low cost and 3C−SiC nanowhiskers having different wavelengths of emitted visible light are disclosed. A thin film (2) of a metal element is deposited on an Si substrate (1), the Si substrate (1) is placed in a plasma produced from hydrogen and a hydrogen carbide at a predetermined substrate temperature for a certain time in a plasma CVD apparatus to form 3C−SiC nanowhiskers. Si atoms in the Si substrate (1) and C atoms in the plasma dissolve in metal liquid particles (3) to a supersaturated concentration, 3C−SiC nanowhiskers (4) are grown on the metal liquid particles (3). The surface of the 3C−SiC nanowhiskers is ended with H atoms to maintain the diameters at certain value. The metal liquid particles (3) at the roots of the 3C−SiC nanowhiskers absorb Si atoms in the Si substrate (1) and penetrate into the Si substrate (1). Such 3C−SiC nanowhiskers can be used as an emitting material matching the Si process. When a 3C−SiC nanowhisker device capable of emitting light because of the quantum confining effect and an Si device are mounted together, a very useful device is produced.
Inventors:
ANDO TOSHIHIRO (JP)
GAMO MIKA (JP)
ZHANG YAFEI (JP)
GAMO MIKA (JP)
ZHANG YAFEI (JP)
Application Number:
PCT/JP2002/006236
Publication Date:
January 03, 2003
Filing Date:
June 21, 2002
Export Citation:
Assignee:
JAPAN SCIENCE & TECH CORP (JP)
NAT INST FOR MATERIALS SCIENCE (JP)
ANDO TOSHIHIRO (JP)
GAMO MIKA (JP)
ZHANG YAFEI (JP)
NAT INST FOR MATERIALS SCIENCE (JP)
ANDO TOSHIHIRO (JP)
GAMO MIKA (JP)
ZHANG YAFEI (JP)
International Classes:
B82B1/00; B82B3/00; C01B31/36; C30B11/00; C30B25/00; C30B25/10; C30B29/62; (IPC1-7): C30B29/62; C01B31/36
Foreign References:
| US6221154B1 | 2001-04-24 | |||
| JPH10203810A | 1998-08-04 | |||
| JPS6236100A | 1987-02-17 |
Other References:
ZHOU X.T. ET AL.: "Thin beta-SiC nanorods and their field emission properties", CHEMICAL PHYSICS LETTERS, vol. 318, no. 1-3, 18 February 2000 (2000-02-18), pages 58 - 62, XP002955021
LAI H.L. ET AL.: "Straight beta-SiC nanorods synthesized by using C-Si-SiO2", APPLIED PHYSICS LETTERS, vol. 76, no. 3, 17 January 2000 (2000-01-17), pages 294 - 296, XP000919613
See also references of EP 1411155A4
LAI H.L. ET AL.: "Straight beta-SiC nanorods synthesized by using C-Si-SiO2", APPLIED PHYSICS LETTERS, vol. 76, no. 3, 17 January 2000 (2000-01-17), pages 294 - 296, XP000919613
See also references of EP 1411155A4
Attorney, Agent or Firm:
Hirayama, Kazuyuki (Shinjukugyoen Bldg. 2-3-10, Shinjuk, Shinjuku-ku Tokyo, JP)
Download PDF:
Previous Patent: METHOD FOR PREPARING GaN BASED COMPOUND SEMICONDUCTOR CRYSTAL
Next Patent: NON-PILLING POLYESTER FIBRES
Next Patent: NON-PILLING POLYESTER FIBRES