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Patent Searching and Data


Title:
GRAPHENE/SILICON NANOWIRE MOLECULAR SENSOR OR METHOD FOR MANUFACTURING SAME AND METHOD FOR IDENTIFYING MOLECULE USING SAME
Document Type and Number:
WIPO Patent Application WO/2015/008905
Kind Code:
A1
Abstract:
The silicon/graphene molecular nanosensor comprises: a silicon substrate; a silicon nanowire coupled to the silicon substrate; and a graphene layer arranged on the upper portion of the silicon nanowire. A method for manufacturing a silicon/graphene molecular nanosensor comprises: a first step of fabricating a silicon nanowire from a silicon substrate using an electrochemical etching method; and a second step of bonding graphene onto the silicon nanowire formed on the silicon substrate. In addition, a method for identifying the kind of a molecule using a silicon/graphene molecular nanosensor comprises the steps of: repeatedly supplying and interrupting a target molecule at a predetermined cycle while applying a voltage to the silicon/graphene molecular nanosensor; and measuring the trend of change of resistance, in terms of time, when the target molecule has been repeatedly supplied and interrupted at the predetermined cycle. A graphene/silicon nanowire molecular sensor according to an embodiment of the present invention can identify restoration to original resistance at a high rate when the resistance changes at a high rate and when gas supply is suspended, and exhibits performance as a molecular sensor regarding the target molecule through waveform analysis of a resistance graph specific to the target molecule.

Inventors:
CHOI SUK HO (KR)
KIM SUNG (KR)
KIM JUNG KIL (KR)
SHIN DONG HEE (KR)
Application Number:
PCT/KR2013/010373
Publication Date:
January 22, 2015
Filing Date:
November 15, 2013
Export Citation:
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Assignee:
UNIV KYUNG HEE UNIV IND COOP GROUP (KR)
International Classes:
G01N27/04; B82B3/00
Foreign References:
US20120237853A12012-09-20
KR101173381B12012-08-10
KR20130066138A2013-06-20
KR101227600B12013-01-29
Other References:
KIM, JUNG KIL ET AL.: "Fabrication and Optical Characterization of Porous Silicon Nanowires.", THE KOREAN SOCIETY OF MANUFACTURING TECHNOLOGY ENGINEERS, vol. 21, no. 6, December 2012 (2012-12-01), pages 855 - 859
Attorney, Agent or Firm:
KASAN IP & LAW FIRM (KR)
특허법인 가산 (KR)
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