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Title:
NANOWIRE PHOTOCATHODE AND METHOD FOR PRODUCING SUCH A PHOTOCATHODE
Document Type and Number:
WIPO Patent Application WO/2017/207898
Kind Code:
A3
Abstract:
The invention relates to a photocathode comprising an amorphous substrate, such as a glass substrate (110), having an input face for receiving incident photons and a rear face opposite the input face. Nanowires (120) made from at least one III-V semiconductor material are deposited on the rear face of the substrate and extend from said face away from the input face. The composition of the nanowires comprises a radial variation in the proportion of the elements of the III-V material, such as to produce a forbidden band gradient from the core of the nanowires towards the periphery thereof. The invention also relates to a method for the MBE production of such a photocathode. During the nanowire growth phase, the fluxes of materials forming the III-V semiconductor material are varied such as to produce a material having a greater forbidden band at the start of the growth phase than at the end of said phase.

Inventors:
ALIBERT, Claude (227 rue du Champ de la Blanche, SAINT GELY-DU-FESC, SAINT GELY-DU-FESC, 34980, FR)
CONDE, Moustapha (39 rue Descartes, BRIVE-LA-GAILLARDE, BRIVE-LA-GAILLARDE, 19100, FR)
HARMAND, Jean-Christophe (34 rue de Liers, SAINT-MICHEL SUR ORGE, 91240, FR)
JEGOREL, Théo (45 rue des Thermopyles, PARIS, 75014, FR)
Application Number:
FR2017/051321
Publication Date:
January 25, 2018
Filing Date:
May 29, 2017
Export Citation:
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Assignee:
PHOTONIS FRANCE (AVENUE ROGER RONCIER, BRIVE, 19100, FR)
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (3 rue Michel Ange, PARIS, 75016, FR)
International Classes:
H01J9/12; H01J1/34; H01J40/06
Foreign References:
US20130207075A12013-08-15
CN103594302A2014-02-19
US6908355B22005-06-21
Other References:
VEER DHAKA ET AL: "High Quality GaAs Nanowires Grown on Glass Substrates", NANO LETTERS, vol. 12, no. 4, 11 April 2012 (2012-04-11), US, pages 1912 - 1918, XP055343175, ISSN: 1530-6984, DOI: 10.1021/nl204314z
PAVAN KUMAR KASANABOINA ET AL: "Bandgap tuning of GaAs/GaAsSb core-shell nanowires grown by molecular beam epitaxy", SEMICONDUCTOR SCIENCE AND TECHNOLOGY., vol. 30, no. 10, 21 September 2015 (2015-09-21), GB, pages 105036, XP055404669, ISSN: 0268-1242, DOI: 10.1088/0268-1242/30/10/105036
YUFENG ZHAO ET AL: "Growth and properties of GaAs nanowires on fused quartz substrate", JOURNAL OF SEMICONDUCTORS, vol. 35, no. 9, 1 September 2014 (2014-09-01), GB; CN, pages 093002, XP055343169, ISSN: 1674-4926, DOI: 10.1088/1674-4926/35/9/093002
ZHAO YU-FENG ET AL: "Synthesis and Photoluminescence Properties of GaAs Nanowires Grown on Fused Quartz Substrates", CHINESE PHYSICS LETTERS, INSTITUTE OF PHYSICS PUBLISHING, BRISTOL, GB, vol. 31, no. 5, 7 May 2014 (2014-05-07), pages 56101, XP020261998, ISSN: 0256-307X, [retrieved on 20140507], DOI: 10.1088/0256-307X/31/5/056101
KUMARESAN V ET AL: "Self-induced growth of vertical GaN nanowires on silica", NANOTECHNOLOGY, IOP, BRISTOL, GB, vol. 27, no. 13, 19 February 2016 (2016-02-19), pages 135602, XP020300302, ISSN: 0957-4484, [retrieved on 20160219], DOI: 10.1088/0957-4484/27/13/135602
XIA SIHAO ET AL: "Research on quantum efficiency and photoemission characteristics of negative-electron-affinity GaN nanowire arrays photocathode", OPTICAL AND QUANTUM ELECTRONICS, CHAPMAN AND HALL, LONDON, GB, vol. 48, no. 5, 4 May 2016 (2016-05-04), pages 1 - 12, XP035927283, ISSN: 0306-8919, [retrieved on 20160504], DOI: 10.1007/S11082-016-0583-1
JEAN-CHRISTOPHE HARMAND: "Growth of nanowires", PULSE SUMMER SCHOOL, PORQUEROLLES, FRANCE, 14-18 SEPTEMBER 2015, 17 September 2015 (2015-09-17), XP055404904, Retrieved from the Internet [retrieved on 20170907]
Attorney, Agent or Firm:
AUGARDE, Eric (BREVALEX, 56 boulevard de l'EmbouchureBP, 31075 TOULOUSE Cedex 2, 31075, FR)
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