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Title:
NARROW LINE-WIDTH LASER
Document Type and Number:
WIPO Patent Application WO/2018/086618
Kind Code:
A1
Abstract:
A narrow line-width laser, comprising: a passive annular waveguide (1); a passive first input/output waveguide (2), coupled to the passive annular waveguide (1); a gain and wavelength-selection unit, configured to provide gains for the entire laser, and further configured to enable a lightwave having a selected wavelength to be coupled to the passive annular waveguide (1); and a passive second input/output waveguide (5), coupled to the passive annular waveguide (1), so that the laser outputs a laser light. The narrow line-width semiconductor laser has a simple structure and has no butt-coupling loss between a gain area and a waveguide area. In addition, the narrow line-width semiconductor laser is an integrated semiconductor technology, has low component costs and high stability and reliability, has no narrow line-width limitation caused by butt-coupling, and has high severe-environment resistance. Further, based on an intra-annular loss compensation structure of the narrow line-width semiconductor laser, an annular external cavity of the narrow line-width semiconductor laser can work in a critical coupling state under different coupling coefficients, and therefore, the laser has a narrow line-width and a high side mode suppress ratio.

Inventors:
ZHANG RUIYING (CN)
Application Number:
PCT/CN2017/110792
Publication Date:
May 17, 2018
Filing Date:
November 14, 2017
Export Citation:
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Assignee:
SUZHOU INST NANO TECH & NANO BIONICS SINANO CAS (CN)
International Classes:
H01S3/083; H01S5/10
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See also references of EP 3540876A4
Attorney, Agent or Firm:
NANJING LI&FENG INTELLECTUAL PROPERTY AGENCY (SPECIAL GENERAL PARTNERSHIP) (CN)
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