Title:
NARROWBAND SCHOTTKY DIODE LIGHT SENSOR AND NARROWBAND SCHOTTKY DIODE LIGHT SENSOR ARRAY COMPRISING SAME
Document Type and Number:
WIPO Patent Application WO/2024/034869
Kind Code:
A1
Abstract:
A narrowband Schottky diode light sensor according to one embodiment of the present invention comprises: a first electrode; a semiconductor layer connected to the first electrode; a MDM stacking member in contact with the semiconductor layer so as to be formed on the semiconductor layer; and a second electrode connected to the MDM stacking member, wherein the MDM stacking member includes at least one sub-MDM stacking member, the sub-MDM stacking member includes a lower metal layer, a dielectric layer and an upper metal layer, which are stacked in order, and the lower metal layer, which is in contact with the semiconductor layer, forms a Schottky junction area.
More Like This:
JPS60205459 | LIGHT RECEIVING MEMBER |
WO/2015/200715 | PASSIVATION OF LIGHT-RECEIVING SURFACES OF SOLAR CELLS WITH CRYSTALLINE SILICON |
JP2011238948 | OPTICAL DEVICE |
Inventors:
LIM MIKYUNG (KR)
LEE JINYOENG (KR)
KIM KWANGSEOP (KR)
KIM HYEON-DON (KR)
KWEUN MINWOO (KR)
KANG WOO SEOK (KR)
LEE JINYOENG (KR)
KIM KWANGSEOP (KR)
KIM HYEON-DON (KR)
KWEUN MINWOO (KR)
KANG WOO SEOK (KR)
Application Number:
PCT/KR2023/009662
Publication Date:
February 15, 2024
Filing Date:
July 07, 2023
Export Citation:
Assignee:
KOREA INST MACH & MATERIALS (KR)
International Classes:
H01L31/0232; H01L31/0224; H01L31/108
Foreign References:
KR20190010259A | 2019-01-30 | |||
KR20210076924A | 2021-06-24 | |||
KR20060112428A | 2006-11-01 | |||
US20100301445A1 | 2010-12-02 | |||
JP2009206309A | 2009-09-10 |
Attorney, Agent or Firm:
PANKOREA PATENT AND LAW FIRM (KR)
Download PDF: