Title:
NAS MEMORY CELL HAVING NAND FLASH MEMORY AND SRAM FUSED THEREWITH, AND NAS MEMORY ARRAY USING SAME
Document Type and Number:
WIPO Patent Application WO/2023/287061
Kind Code:
A1
Abstract:
The present invention relates to a NAS memory cell having a NAND flash memory and an SRAM fused therewith, and a NAS memory array using same. An NST unit is connected to a first data node of an SRAM cell together with a NAND flash string, and thus it is advantageous that data can be transmitted all together for all selected rows from the NAND flash string to the SRAM cell, or vice versa, without going through any intermediate process including an I/O buffer.
Inventors:
KIM YOON (KR)
AHN JI HOON (KR)
AHN JI HOON (KR)
Application Number:
PCT/KR2022/009114
Publication Date:
January 19, 2023
Filing Date:
June 27, 2022
Export Citation:
Assignee:
UNIV SEOUL IND COOP FOUND (KR)
International Classes:
G11C14/00; G11C7/12; G11C8/10; G11C11/413
Foreign References:
KR20120123180A | 2012-11-08 | |||
KR20170090981A | 2017-08-08 | |||
KR20090028568A | 2009-03-18 | |||
KR20090026276A | 2009-03-12 | |||
US20200328186A1 | 2020-10-15 |
Attorney, Agent or Firm:
KWON, O Jun (KR)
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