NEUTRON DETECTOR WITH WAFER-TO-WAFER BONDING

Title:

NEUTRON DETECTOR WITH WAFER-TO-WAFER BONDING

Document Type and Number:

WIPO Patent Application WO/2012/009188

Kind Code:

A3

Abstract:

A method of manufacturing a neutron detector comprises forming a first wafer by at least forming an oxide layer on a substrate, forming an active semiconductor layer on the oxide layer, and forming an interconnect layer on the active semiconductor layer, forming at least one electrically conductive pathway extending from the interconnect layer through the active semiconductor layer and the oxide layer, forming a circuit transfer bond between the interconnect layer and a second wafer, removing the substrate of the first wafer after forming the circuit transfer bond, depositing a bond pad on the oxide layer after removing the substrate of the first wafer, wherein the bond pad is electrically connected to the electrically conductive pathway, depositing a barrier layer on the oxide layer after removing the substrate of the first wafer, and depositing a neutron conversion layer on the barrier layer after depositing the barrier layer.

Inventors:

LARSEN BRADLEY J (US)
RANDAZZO TODD A (US)

Application Number:

PCT/US2011/043007

Publication Date:

March 08, 2012

Filing Date:

July 06, 2011

Export Citation:

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Assignee:

HONEYWELL INT INC (US)
LARSEN BRADLEY J (US)
RANDAZZO TODD A (US)

International Classes:

H01L31/115; G01T3/08; H01L21/20

Foreign References:

US6867444B1	2005-03-15
US20090072141A1	2009-03-19
JPH07176777A	1995-07-14
KR20100030342A	2010-03-18

Other References: