NEUTRON DOPING METHOD AND DEVICE

WIPO Patent Application WO/2014/104945

A3

The invention relates to technology for the neutron transmutation doping of silicon with thermal neutrons, a practice which is widely applicable in the manufacture of instruments in the electronic and electrical industry. The present neutron doping method involves moderating fast neutrons from a source using a moderator material, forming a flux of thermal neutrons into a selected area and irradiating the substance to be doped with thermal neutrons, wherein the fast neutrons from the source are separated during the moderation process according to their angles of propagation, fluxes thereof moving in a direction determined by the structure of the moderator material are separated, the fluxes separated by the structure are combined, are shaped in the form of a narrow strip and are directed at the substance to be doped, and the substance to be doped is controllably moved in the neutron flux focus region. The technical result of the invention is a more efficient doping process and the formation of regions with a higher degree of doping in specific portions of the doped substance.

PETROV GEORGY NIKOLAEVICH (RU)
DROBYSHEVSKY YURY VASILIEVICH (RU)
PROKHOROV ALEXANDR KIRILLOVICH (RU)
GUSCHIN VITALY VENIAMINOVICH (RU)
STOLBOV SERGEI NIKOLAEVICH (RU)
NEKRASOV SERGEI ALEXANDROVICH (RU)

PCT/RU2013/001169

August 07, 2014

December 25, 2013

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PETROV GEORGY NIKOLAEVICH (RU)
DROBYSHEVSKY YURY VASILIEVICH (RU)

C30B31/20; G21G1/06; H01L21/263

RU2089011C1	1997-08-27
RU2193610C2	2002-11-27
RU2056649C1	1996-03-20
RU2145128C1	2000-01-27

APARINA Tatiana Viktorovna (LLCul. Suschevskaya, 8-12/, Moscow 5, RU)

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