Title:
NIOBIUM SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2020/195121
Kind Code:
A1
Abstract:
Provided is a niobium sputtering target having excellent film thickness uniformity throughout the target life. The present invention provides a niobium sputtering target in which a target cross section perpendicular to the sputtering surface of the plate-shaped target is divided into three equal parts including an upper part, a central part, and a lower part from the sputtering surface side in the direction of a line normal to the sputtering surface, at a position between the center and the outer periphery of the sputtering surface, and when the crystal orientation distribution of the upper part, the central part, and the lower part is measured using the EBSD method, and the [111] area ratio is determined in accordance with formula (1) for each of the upper part, central part, and lower part measurement regions, the rate of change indicated by formula (2) of the [111] area ratio of each of the upper part, the central part, and the lower part is 2.5 or less. (1): [111] Area ratio = Total area of crystal grains in which the [111] plane is oriented in the direction of the normal line in the measurement region/Area of entire measurement region. (2): Rate of change = [Maximum value – Minimum value]/Minimum value
Inventors:
YAMADA YUKI (JP)
NAGATSU KOTARO (JP)
NAGATSU KOTARO (JP)
Application Number:
PCT/JP2020/003024
Publication Date:
October 01, 2020
Filing Date:
January 28, 2020
Export Citation:
Assignee:
JX NIPPON MINING & METALS CORP (JP)
International Classes:
C23C14/34
Foreign References:
| JP2004511651A | 2004-04-15 | |||
| JP2018519413A | 2018-07-19 | |||
| JP2014194072A | 2014-10-09 |
Attorney, Agent or Firm:
AXIS PATENT INTERNATIONAL (JP)
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