Title:
NITRIDE-BASED LIGHT EMITTING DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/203466
Kind Code:
A1
Abstract:
A nitride-based light emitting device (semiconductor laser device (51a)) comprises: a nitride-based semiconductor light emitting element (semiconductor laser element (11)) having a multilayer structure in which a first cladding layer (103), a first optical guide layer (105), a quantum well active layer (106), a second optical guide layer (107), and a second cladding layer (109) are laminated on an AlxGa1-xN (0 ≤ x ≤ 1) substrate (GaN substrate (101)) in the order of description from the AlxGa1-xN substrate side; and a submount substrate (122) on which the nitride-based semiconductor light emitting element is mounted. The nitride-based semiconductor light emitting element is mounted on the submount substrate (122) so that the multilayer structure faces the submount substrate (122). The submount substrate (122) is formed from diamond. In the nitride-based semiconductor light emitting element, a concave warp is formed on the AlxGa1-xN substrate side.
Inventors:
TAKAYAMA TORU
NISHIKAWA TOHRU
NAKATANI TOUGO
SAMONJI KATSUYA
KANO TAKASHI
UEDA SHINJI
NISHIKAWA TOHRU
NAKATANI TOUGO
SAMONJI KATSUYA
KANO TAKASHI
UEDA SHINJI
Application Number:
PCT/JP2018/015319
Publication Date:
November 08, 2018
Filing Date:
April 12, 2018
Export Citation:
Assignee:
PANASONIC IP MAN CO LTD (JP)
International Classes:
H01S5/024; H01S5/023; H01S5/0233; H01S5/323
Domestic Patent References:
| WO2013175697A1 | 2013-11-28 | |||
| WO2012127778A1 | 2012-09-27 | |||
| WO2015093447A1 | 2015-06-25 |
Foreign References:
| JP2012209352A | 2012-10-25 | |||
| JP2010141242A | 2010-06-24 | |||
| JP2011044669A | 2011-03-03 | |||
| JP2006165453A | 2006-06-22 | |||
| JP2003133648A | 2003-05-09 | |||
| JP2010238954A | 2010-10-21 | |||
| JP2011253925A | 2011-12-15 | |||
| JPH10215022A | 1998-08-11 | |||
| US20100220755A1 | 2010-09-02 |
Attorney, Agent or Firm:
KAMATA Kenji et al. (JP)
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