Title:
NITRIDE-BASED SEMICONDUCTOR CIRCUIT AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
WIPO Patent Application WO/2023/130336
Kind Code:
A1
Abstract:
A nitride-based semiconductor circuit including a first semiconductor substrate, a second semiconductor substrate, a nitride-based heterostructure, connectors, a first patterned conductive layer, a second patterned conductive layer, and connecting vias is provided. The second substrate is disposed on the first substrate. The first substrate has first dopants, and the second substrate has second dopants, which is different from the first dopants, and a pn junction is formed between the first substrate and the second substrate. The nitride-based heterostructure is disposed on the second substrate. The connectors are disposed on the nitride-based heterostructure. The first and second patterned conductive layers are disposed on the connectors. The connecting vias include a first interconnection and a second interconnection. The first interconnection electrically connects the first substrate to one of the connectors. The second interconnection electrically connects the second substrate to another one of the connectors.
Inventors:
ZHAO QIYUE (CN)
GAO WUHAO (CN)
GAO WUHAO (CN)
Application Number:
PCT/CN2022/070619
Publication Date:
July 13, 2023
Filing Date:
January 07, 2022
Export Citation:
Assignee:
INNOSCIENCE SUZHOU TECH CO LTD (CN)
International Classes:
H01L27/085
Foreign References:
| US20140367744A1 | 2014-12-18 | |||
| CN104347698A | 2015-02-11 | |||
| US20090189191A1 | 2009-07-30 | |||
| US20150371987A1 | 2015-12-24 |
Attorney, Agent or Firm:
IDEA INTELLECTUAL (SHENZHEN) IP AGENCY (CN)
Download PDF: