Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
WIPO Patent Application WO/2023/102744
Kind Code:
A1
Abstract:
A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a nitride-based layer, and a plurality of gate electrodes. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap greater than a bandgap of the first nitride-based semiconductor layer. The nitride-based layer is disposed over the second nitride-based semiconductor layer and extends along a first direction to have a strip profile. The gate electrodes are disposed over the nitride-based layer and arranged along the first direction such that at least two of the gate electrodes are separated from each other.

More Like This:
JP5037804Electronic devices using vertically oriented carbon nanotubes
WO/2022/020496ION IMPLANTATION FOR REDUCED HYDROGEN INCORPORATION IN AMORPHOUS SILICON
Inventors:
RAO JIAN (CN)
YOU JHENG-SHENG (CN)
CHEN PO-WEI (CN)
CHANG MING-HONG (CN)
Application Number:
PCT/CN2021/136166
Publication Date:
June 15, 2023
Filing Date:
December 07, 2021
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
INNOSCIENCE SUZHOU SEMICONDUCTOR CO LTD (CN)
International Classes:
H01L29/66; H01L29/20
Foreign References:
CN112930602A2021-06-08
CN105047707A2015-11-11
US20150021616A12015-01-22
US20200357907A12020-11-12
Attorney, Agent or Firm:
IDEA INTELLECTUAL (SHENZHEN) IP AGENCY (CN)
Download PDF:
View/Download PDF      PDF Help



 
Previous Patent: ACCESS CONTROL METHOD AND APPARATUS

Next Patent: ENHANCED CHANNEL STATE INFORMATION REPORTING