Title:
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
WIPO Patent Application WO/2023/197251
Kind Code:
A1
Abstract:
The nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a first passivation layer, and an electrode structure. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap greater than a bandgap of the first nitride-based semiconductor layer. The first passivation layer is disposed on the second nitride-based semiconductor layer. The electrode structure is disposed on the second nitride-based semiconductor layer and the first passivation layer and penetrates the first passivation layer to make contact with the second nitride-based semiconductor layer, in which the electrode structure has a sidewall extending upward from the first passivation layer and oblique with respect to the first passivation layer.
Inventors:
ZHANG LIJIE (CN)
ZHANG XIAO (CN)
OUYANG JUE (CN)
HSIEH WEN-YUAN (CN)
ZHANG XIAO (CN)
OUYANG JUE (CN)
HSIEH WEN-YUAN (CN)
Application Number:
PCT/CN2022/086849
Publication Date:
October 19, 2023
Filing Date:
April 14, 2022
Export Citation:
Assignee:
INNOSCIENCE SUZHOU SEMICONDUCTOR CO LTD (CN)
International Classes:
H01L29/06
Domestic Patent References:
| WO2022067644A1 | 2022-04-07 |
Foreign References:
| US20080001260A1 | 2008-01-03 | |||
| CN106486543A | 2017-03-08 |
Attorney, Agent or Firm:
BEIJING BESTIPR INTELLECTUAL PROPERTY LAW CORPORATION (CN)
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