Title:
NITRIDE SEMICONDUCTOR-BASED SOLAR CELL AND MANUFACTURING METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2012/124856
Kind Code:
A1
Abstract:
Disclosed are a nitride semiconductor-based solar cell including a photoactive layer having a wide area for incident light and a manufacturing method thereof.
An opening is formed on a mask layer which partially shields a first n-type nitride semiconductor layer. The first n-type nitride semiconductor layer is exposed through the opening and a second n-type nitride semiconductor layer is grown on the basis of the exposed first n-type nitride semiconductor layer. The grown second n-type nitride semiconductor layer is buried in the opening and formed in a hexagonal pyramid form. In addition, a photoactive layer and a p-type nitride semiconductor layer are sequentially formed along the second n-type nitride semiconductor layer. Therefore, a hole injection-electron pair is easily formed by the incident light. Furthermore, the area of the photoactive layer is enlarged and photoelectric conversion efficiency is increased.
Inventors:
LEE DONG SEON (KR)
BAE SI YOUNG (KR)
KIM DO HYUNG (KR)
BAEK JONG HYEOB (KR)
LEE SEUNG JAE (KR)
BAE SI YOUNG (KR)
KIM DO HYUNG (KR)
BAEK JONG HYEOB (KR)
LEE SEUNG JAE (KR)
Application Number:
PCT/KR2011/003650
Publication Date:
September 20, 2012
Filing Date:
May 17, 2011
Export Citation:
Assignee:
KWANGJU INST SCI & TECH (KR)
LEE DONG SEON (KR)
BAE SI YOUNG (KR)
KIM DO HYUNG (KR)
BAEK JONG HYEOB (KR)
LEE SEUNG JAE (KR)
LEE DONG SEON (KR)
BAE SI YOUNG (KR)
KIM DO HYUNG (KR)
BAEK JONG HYEOB (KR)
LEE SEUNG JAE (KR)
International Classes:
H01L31/042; H01L31/0236
Foreign References:
| KR100755610B1 | 2007-09-06 | |||
| KR100826389B1 | 2008-05-02 | |||
| KR20030017636A | 2003-03-03 | |||
| KR20100136762A | 2010-12-29 |
Attorney, Agent or Firm:
E-SANG PATENT & TRADEMARK LAW FIRM (KR)
특허법인이상 (KR)
특허법인이상 (KR)
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Claims: