Title:
NITRIDE SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR SAME
Document Type and Number:
WIPO Patent Application WO/2015/056745
Kind Code:
A1
Abstract:
This nitride semiconductor device includes: a nitride semiconductor substrate having a non-polar surface or a semipolar surface as a primary surface for crystalline growth; and a drift layer formed on the nitride semiconductor substrate, the drift layer having a GaN layer and an Al-containing layer comprising an Al-containing nitride semiconductor, the drift layer comprising a nitride semiconductor laminate structure in which the GaN layer and the Al-containing layer are laminated along the c axis or an axis inclined by 30° or less with respect thereto.
Inventors:
TANAKA TAKETOSHI (JP)
TAKADO SHINYA (JP)
AKETA MASATOSHI (JP)
TAKADO SHINYA (JP)
AKETA MASATOSHI (JP)
Application Number:
PCT/JP2014/077571
Publication Date:
April 23, 2015
Filing Date:
October 16, 2014
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L29/872; H01L21/337; H01L21/338; H01L29/04; H01L29/06; H01L29/12; H01L29/41; H01L29/47; H01L29/778; H01L29/78; H01L29/808; H01L29/812; H01L29/861; H01L29/868
Domestic Patent References:
| WO2012008027A1 | 2012-01-19 |
Foreign References:
| JP2010225938A | 2010-10-07 | |||
| JP2008258514A | 2008-10-23 | |||
| JP2011082397A | 2011-04-21 | |||
| JP2009170746A | 2009-07-30 | |||
| JP2007184382A | 2007-07-19 | |||
| JP2008124362A | 2008-05-29 |
Attorney, Agent or Firm:
INAOKA, Kosaku et al. (JP)
Kosaku Inaoka (JP)
Kosaku Inaoka (JP)
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