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Title:
NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/127520
Kind Code:
A1
Abstract:
A nitride semiconductor device 1 includes: a low-resistance Si substrate 2 having a first main surface 2a and a second main surface 2b opposite thereto; a high-resistance Si layer 3 that is formed on the first main surface 2a and that has a higher resistivity than the low-resistance Si substrate 2; and a nitride epitaxial layer 20 disposed on the high-resistance Si layer 3.

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Inventors:
ITO NORIKAZU (JP)
SHIKATA KEITA (JP)
TANAKA TAKETOSHI (JP)
Application Number:
PCT/JP2022/046180
Publication Date:
July 06, 2023
Filing Date:
December 15, 2022
Export Citation:
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Assignee:
ROHM CO LTD (JP)
International Classes:
H01L21/338; H01L21/28; H01L29/41; H01L29/417; H01L29/778; H01L29/812
Domestic Patent References:
WO2017002432A12017-01-05
Foreign References:
JP2015002329A2015-01-05
JP2014036115A2014-02-24
JP2018041933A2018-03-15
JP2012134479A2012-07-12
JP2013012735A2013-01-17
JP2015207624A2015-11-19
JP2004363563A2004-12-24
JP2013239735A2013-11-28
JP2019169552A2019-10-03
Attorney, Agent or Firm:
AI ASSOCIATION OF PATENT AND TRADEMARK ATTORNEYS (JP)
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