Title:
NITRIDE SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2004/064212
Kind Code:
A1
Abstract:
A nitride semiconductor device comprises a substrate (101) having a surface which is provided with projected portions (102a) composed of a group III nitride and gaps as recessed portions (102b), a nitride semiconductor layer (106) formed on the substrate (101), and a nitride semiconductor multilayer body which is formed on the nitride semiconductor layer (106) and contains an active layer. The lattice constant of the substrate (101) is different from that of the group III nitride (102a). The substrate (101) has masks (104a) composed of a dielectric material (104). The masks (104a) are formed only on the lateral surfaces of the projected portions (102a) and the upper surfaces of the projected portions (102a) are exposed. The substrate (101) is exposed in the recessed portions (102b). The height (L1) of the masks (104a) is not less than 50 nm and not more than 5,000 nm, the width (L2) of the recessed portions (102b) is not less than 5,000 nm and not more than 50,000 nm, and the aspect ratio (L1/L2) of the recessed portions (102b) is not less than 0.001 and not more than 1.0. With this constitution, the nitride semiconductor device can have improved reliability.
Inventors:
Sugahara, Gaku (1-1-68-101, Suzaku 5-chome Nara-sh, Nara 06, 63108, JP)
Kawaguchi, Yasutoshi (10-24, Nakamachi Kadoma-sh, Osaka 55, 57100, JP)
Ishibashi, Akihiko (2-22-20-301, Todaiji Shimamoto-ch, Mishima-gun 02, 61800, JP)
Yokogawa, Toshiya (2-24, Aoyama 5-chome Nara-sh, Nara 01, 63081, JP)
Matsubara, Atsushi (4-1-401, Tennoden Joto-ku, Osaka-sh, Osaka 12, 53600, JP)
Kawaguchi, Yasutoshi (10-24, Nakamachi Kadoma-sh, Osaka 55, 57100, JP)
Ishibashi, Akihiko (2-22-20-301, Todaiji Shimamoto-ch, Mishima-gun 02, 61800, JP)
Yokogawa, Toshiya (2-24, Aoyama 5-chome Nara-sh, Nara 01, 63081, JP)
Matsubara, Atsushi (4-1-401, Tennoden Joto-ku, Osaka-sh, Osaka 12, 53600, JP)
Application Number:
PCT/JP2004/000201
Publication Date:
July 29, 2004
Filing Date:
January 14, 2004
Export Citation:
Assignee:
MATSUSHITA ELECTRIC INDUSTRIAL CO. LTD. (1006, Oaza Kadoma Kadoma-sh, Osaka 01, 57185, JP)
Sugahara, Gaku (1-1-68-101, Suzaku 5-chome Nara-sh, Nara 06, 63108, JP)
Kawaguchi, Yasutoshi (10-24, Nakamachi Kadoma-sh, Osaka 55, 57100, JP)
Ishibashi, Akihiko (2-22-20-301, Todaiji Shimamoto-ch, Mishima-gun 02, 61800, JP)
Yokogawa, Toshiya (2-24, Aoyama 5-chome Nara-sh, Nara 01, 63081, JP)
Matsubara, Atsushi (4-1-401, Tennoden Joto-ku, Osaka-sh, Osaka 12, 53600, JP)
Sugahara, Gaku (1-1-68-101, Suzaku 5-chome Nara-sh, Nara 06, 63108, JP)
Kawaguchi, Yasutoshi (10-24, Nakamachi Kadoma-sh, Osaka 55, 57100, JP)
Ishibashi, Akihiko (2-22-20-301, Todaiji Shimamoto-ch, Mishima-gun 02, 61800, JP)
Yokogawa, Toshiya (2-24, Aoyama 5-chome Nara-sh, Nara 01, 63081, JP)
Matsubara, Atsushi (4-1-401, Tennoden Joto-ku, Osaka-sh, Osaka 12, 53600, JP)
International Classes:
H01L21/20; H01S5/323; H01S5/02; (IPC1-7): H01S5/323
Attorney, Agent or Firm:
Saegusa, Eiji (Kitahama TNK Building, 1-7-1 Doshomachi, Chuo-ku, Osaka-sh, Osaka 45, 54100, JP)