Title:
NITRIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2012/008075
Kind Code:
A1
Abstract:
Disclosed is a nitride semiconductor device which is provided with a nitride semiconductor layer laminated body (102) having an active region (102A), and finger-like first electrode (131) and second electrode (132), which are formed at an interval on the active region. A first electrode wiring line (151) is formed on the first electrode by being in contact with the first electrode, and a second electrode wiring line (152) is formed on the second electrode by being in contact with the second electrode. A second insulating film is formed such that the second insulating film covers the first electrode wiring line and the second electrode wiring line, and a first metal layer (161) is formed on the second insulating film. The first metal layer is formed on the active region with the second insulating film therebetween, and is connected to the first electrode wiring line.
Inventors:
KAIBARA, Kazuhiro (())
海原一裕 (())
ISHIDA, Hidetoshi (())
海原一裕 (())
ISHIDA, Hidetoshi (())
Application Number:
JP2011/002361
Publication Date:
January 19, 2012
Filing Date:
April 22, 2011
Export Citation:
Assignee:
PANASONIC CORPORATION (1006, Oaza Kadoma Kadoma-sh, Osaka 01, 〒5718501, JP)
パナソニック株式会社 (〒01 大阪府門真市大字門真１００６番地 Osaka, 〒5718501, JP)
KAIBARA, Kazuhiro (())
海原一裕 (())
パナソニック株式会社 (〒01 大阪府門真市大字門真１００６番地 Osaka, 〒5718501, JP)
KAIBARA, Kazuhiro (())
海原一裕 (())
International Classes:
H01L21/28; H01L21/3205; H01L21/338; H01L23/52; H01L29/417; H01L29/47; H01L29/778; H01L29/812; H01L29/872
Attorney, Agent or Firm:
MAEDA, Hiroshi et al. (Osaka-Marubeni Bldg, 5-7Hommachi 2-chome, Chuo-ku, Osaka-sh, Osaka 53, 〒5410053, JP)
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Claims:
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