Title:
NITRIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2013/153927
Kind Code:
A1
Abstract:
Provided is a nitride semiconductor device that can reduce contact resistance of an ohmic electrode and a nitride semiconductor layer. In this GaN HFET, concavities (106, 109) are formed at a nitride semiconductor laminate (20) comprising an undoped GaN layer (1) and an undoped AlGaN layer (2) formed on an Si substrate (10), and a source electrode (11) and a drain electrode (12) are formed in the concavities (106, 109). In a region deeper than the interface (S1, S2) between the GaN layer (1) and the source electrode (11) and drain electrode (12), which comprise a TiAl material, there is a first chlorine concentration peak (P11) proximal to the interface, and at a position deeper than the first chlorine concentration peak (P11), there is a second chlorine concentration peak (P22) of a chlorine concentration of no greater than 1.3×1017 cm-3.
Inventors:
YASUI TADASHI
MORISHITA SATOSHI
FUJITA KOICHIRO
KURITA DAISUKE
MORISHITA SATOSHI
FUJITA KOICHIRO
KURITA DAISUKE
Application Number:
PCT/JP2013/058024
Publication Date:
October 17, 2013
Filing Date:
March 21, 2013
Export Citation:
Assignee:
SHARP KK (JP)
International Classes:
H01L21/338; H01L21/28; H01L29/417; H01L29/778; H01L29/812
Foreign References:
| JP2007053185A | 2007-03-01 | |||
| JP2011155221A | 2011-08-11 | |||
| JP2009141244A | 2009-06-25 |
Attorney, Agent or Firm:
SAMEJIMA, Mutsumi et al. (JP)
Mutsumi Sameshima (JP)
Mutsumi Sameshima (JP)
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