Title:
NITRIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/181391
Kind Code:
A1
Abstract:
A nitride semiconductor device (10) according to the present invention is provided with: a substrate (12); a drift layer (14) having a first conductivity type and a first base layer (16) having a second conductivity type, which are sequentially provided on a first main surface (12a) of the substrate (12); a gate opening (22) which penetrates through the first base layer (16) and reaches the drift layer (14); an electron transit layer (26) which is provided above the first base layer (16) along the inner surface of the gate opening (22); a gate electrode (30) which is provided above the electron transit layer (26) so as to cover the gate opening (22); a source electrode (34) which is connected to the first base layer (16); a drain electrode (36) which is provided on a second main surface (12b) of the substrate (12); and a high resistance layer (24) which is provided between the first base layer (16) and the electron transit layer (26) in the gate opening (22), and which is formed of a nitride semiconductor, while having a higher resistance than the first base layer (16).
Inventors:
OGAWA MASAHIRO
SHIBATA DAISUKE
TAMURA SATOSHI
SHIBATA DAISUKE
TAMURA SATOSHI
Application Number:
PCT/JP2019/007406
Publication Date:
September 26, 2019
Filing Date:
February 26, 2019
Export Citation:
Assignee:
PANASONIC CORP (JP)
International Classes:
H01L21/337; H01L21/338; H01L29/778; H01L29/808; H01L29/812
Domestic Patent References:
| WO2017138505A1 | 2017-08-17 | |||
| WO2015122135A1 | 2015-08-20 | |||
| WO2012049892A1 | 2012-04-19 |
Foreign References:
| JP2011082397A | 2011-04-21 |
Attorney, Agent or Firm:
NII, Hiromori et al. (JP)
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