Title:
NITRIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/079686
Kind Code:
A1
Abstract:
A nitride semiconductor device (1) that comprises a vertical transistor (2) and a vertical diode (3) is provided with: a substrate (12); a drift layer (14) of a first conduction type; a block layer (16) of a second conduction type; a gate opening (20) and an opening (22) that penetrate the block layer (16); an electron-traveling layer (24) and an electron supply layer (26) that are disposed above the block layer (16) and also in portions along the respective inner surfaces of the gate opening (20) and the opening (22); a gate electrode (42G) and an anode electrode (42A) that are provided so as to cover the gate opening (20) and the opening (22), respectively; a source electrode (40S) that is connected to both the electron supply layer (26) and the electron-traveling layer (24); and a drain electrode (44D) and a cathode electrode (44C), wherein the anode electrode (42A) and the source electrode (40S) are electrically connected to each other, while the cathode electrode (44C) and the drain electrode (44D) are electrically connected to each other.
Inventors:
SHIBATA DAISUKE
TAMURA SATOSHI
TSURUMI NAOHIRO
TAMURA SATOSHI
TSURUMI NAOHIRO
Application Number:
PCT/JP2020/036481
Publication Date:
April 29, 2021
Filing Date:
September 25, 2020
Export Citation:
Assignee:
PANASONIC CORP (JP)
International Classes:
H01L29/812; H01L21/28; H01L21/337; H01L21/338; H01L21/822; H01L21/8232; H01L27/04; H01L27/06; H01L27/095; H01L29/06; H01L29/417; H01L29/778; H01L29/808; H01L29/861; H01L29/868; H01L29/872
Domestic Patent References:
| WO2015122135A1 | 2015-08-20 | |||
| WO2016147541A1 | 2016-09-22 |
Foreign References:
| JP2017147435A | 2017-08-24 | |||
| JP2017168579A | 2017-09-21 |
Attorney, Agent or Firm:
NII, Hiromori et al. (JP)
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