Title:
NITRIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/224092
Kind Code:
A1
Abstract:
This nitride semiconductor device is provided with: a semiconductor substrate; a transistor which is configured from a nitride semiconductor that is formed on the semiconductor substrate, while comprising a drain electrode, a source electrode, a gate electrode, and a Schottky diode and a first PIN diode that are formed between the gate electrode and the source electrode; and a temperature sensor which is provided on the semiconductor substrate in a different position from the transistor, while comprising a second PIN diode that is configured from a nitride semiconductor.
Inventors:
OTAKE HIROTAKA (JP)
Application Number:
PCT/JP2023/018581
Publication Date:
November 23, 2023
Filing Date:
May 18, 2023
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L29/812; H01L21/329; H01L21/337; H01L21/338; H01L29/41; H01L29/417; H01L29/778; H01L29/808; H01L29/861; H01L29/868; H01L29/872
Foreign References:
| JP2016219632A | 2016-12-22 | |||
| JP2013140831A | 2013-07-18 | |||
| EP3926689A1 | 2021-12-22 | |||
| JP2003068980A | 2003-03-07 |
Attorney, Agent or Firm:
ONDA Makoto et al. (JP)
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