Title:
NITRIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/075391
Kind Code:
A1
Abstract:
This nitride semiconductor device (10) comprises: a hexagonal SiC substrate (22) having a main surface (22A) inclined at an off angle of 2-6° in a specific crystal direction with respect to the c-plane; a nitride semiconductor layer (24) disposed on the main surface (22A) of the SiC substrate (22); and a gate electrode (20), a source electrode (38), and a drain electrode (40) disposed on the nitride semiconductor layer (24). The nitride semiconductor layer (24) includes an electron transport layer (30) and an electron injection layer (32) which is disposed on the electron transport layer (30) and has a band gap larger than that of the electron transport layer (30). The gate electrode (20) extends in a second direction and is disposed between the source electrode (38) and the drain electrode (40) which are isolated in a first direction. The first direction intersects a third direction, which matches the specific crystal direction in plan view, at an angle within the range of 90°±15°.
Inventors:
SHIKATA KEITA (JP)
Application Number:
PCT/JP2023/028989
Publication Date:
April 11, 2024
Filing Date:
August 08, 2023
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L29/778; H01L21/20; H01L21/338; H01L29/812
Attorney, Agent or Firm:
ONDA Makoto et al. (JP)
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