Title:
NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2011/077704
Kind Code:
A1
Abstract:
Disclosed is a nitride semiconductor element which is provided with: a nitride semiconductor multilayer structure (20) having a p-type semiconductor region having the surface (12) tilted at an angle of 1-5° from the m-plane; and an electrode (30) which is provided on the p-type semiconductor region. The p-type semiconductor region is formed of an AlxInyGazN (x+y+z=1, x≥0, y≥0, z≥0) semiconductor layer (26). The electrode (30) includes an Mg layer (32) in contact with the surface (12) of the p-type semiconductor region, and a metal layer (34) formed on the Mg layer (32). The metal layer (34) is formed of at least one kind of metal selected from among a group composed of Pt, Mo and Pd.
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Inventors:
YOKOGAWA TOSHIYA
OYA MITSUAKI
YAMADA ATSUSHI
KATO RYOU
OYA MITSUAKI
YAMADA ATSUSHI
KATO RYOU
Application Number:
PCT/JP2010/007400
Publication Date:
June 30, 2011
Filing Date:
December 21, 2010
Export Citation:
Assignee:
PANASONIC CORP (JP)
YOKOGAWA TOSHIYA
OYA MITSUAKI
YAMADA ATSUSHI
KATO RYOU
YOKOGAWA TOSHIYA
OYA MITSUAKI
YAMADA ATSUSHI
KATO RYOU
International Classes:
H01L33/40; H01L33/32
Domestic Patent References:
| WO2010116703A1 | 2010-10-14 | |||
| WO2010103804A1 | 2010-09-16 |
Foreign References:
| JP2008153285A | 2008-07-03 | |||
| JPH0864871A | 1996-03-08 | |||
| JP2001160656A | 2001-06-12 | |||
| JPH0711430A | 1995-01-13 | |||
| JPH11274554A | 1999-10-08 | |||
| JP2001308462A | 2001-11-02 | |||
| JP2003332697A | 2003-11-21 | |||
| JPH0864871A | 1996-03-08 | |||
| JPH1140846A | 1999-02-12 |
Other References:
See also references of EP 2479807A4
Attorney, Agent or Firm:
OKUDA, SEIJI (JP)
Seiji Okuda (JP)
Seiji Okuda (JP)
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