Title:
NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2011/086620
Kind Code:
A1
Abstract:
Disclosed is a nitride semiconductor element which is provided with: a nitride semiconductor multilayer structure having a p-type semiconductor region wherein the surface thereof is the m plane; and an electrode which is provided on the p-type semiconductor region. The p-type semiconductor region is formed of an AlxGayInzN (x+y+z=1, x≥0, y≥0, z≥0) semiconductor, and the electrode includes Mg, Zn, and Ag.
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Inventors:
ANZUE NAOMI
YOKOGAWA TOSHIYA
YOKOGAWA TOSHIYA
Application Number:
PCT/JP2010/005723
Publication Date:
July 21, 2011
Filing Date:
September 21, 2010
Export Citation:
Assignee:
PANASONIC CORP (JP)
ANZUE NAOMI
YOKOGAWA TOSHIYA
ANZUE NAOMI
YOKOGAWA TOSHIYA
International Classes:
H01L33/32; H01L21/28; H01L33/16; H01L33/40
Domestic Patent References:
| WO2007136097A1 | 2007-11-29 | |||
| WO2010113406A1 | 2010-10-07 | |||
| WO2010113405A1 | 2010-10-07 | |||
| WO2010103804A1 | 2010-09-16 |
Foreign References:
| JP2008153285A | 2008-07-03 | |||
| JP2002026392A | 2002-01-25 | |||
| JPH1084159A | 1998-03-31 | |||
| JPH0864871A | 1996-03-08 | |||
| JPH1140846A | 1999-02-12 | |||
| JP2005197631A | 2005-07-21 |
Other References:
YUHZOH TSUDA ET AL.: "Blue Laser Diodes Fabricated on m-Plane GaN Substrates", APPLIED PHYSICS EXPRESS, vol. 1, 11 January 2008 (2008-01-11), pages 01104.1 - 01104.3, XP008153917
See also references of EP 2369645A4
MASSALSKI, T. B.: "BINARY ALLOY PHASE DIAGRAMS", 1990, ASM INTERNATIONAL
See also references of EP 2369645A4
MASSALSKI, T. B.: "BINARY ALLOY PHASE DIAGRAMS", 1990, ASM INTERNATIONAL
Attorney, Agent or Firm:
OKUDA, SEIJI (JP)
Seiji Okuda (JP)
Seiji Okuda (JP)
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Claims: