Title:
NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2022/054877
Kind Code:
A1
Abstract:
The present invention comprises: a first light-emitting part including a first n-side semiconductor layer, a first active layer provided on the first n-side semiconductor layer, and a first p-side semiconductor layer provided on the first active layer; a second light-emitting part including a second n-side semiconductor layer provided on the first p-side semiconductor layer, a second active layer provided on the second n-side semiconductor layer, and a second p-side semiconductor layer provided on the second active layer; a first layer that is provided between the first light-emitting part and the second light-emitting part so as to be in contact with the first p-side semiconductor layer and that contains an n-side impurity at a first concentration; and a second layer that is provided between the first layer and the second n-side semiconductor layer and that contains an n-type impurity at a second concentration. The second n-side semiconductor layer contains an n-type impurity at a third concentration. The first concentration and the second concentration are higher than the third concentration. The first concentration is higher than the second concentration. The thickness of the second layer is greater than the thickness of the first layer.
Inventors:
FUNAKOSHI RYOTA (JP)
Application Number:
PCT/JP2021/033187
Publication Date:
March 17, 2022
Filing Date:
September 09, 2021
Export Citation:
Assignee:
NICHIA CORP (JP)
International Classes:
H01L33/04; H01L33/32
Foreign References:
| JP2019149429A | 2019-09-05 | |||
| JP2002009335A | 2002-01-11 | |||
| JPH07335939A | 1995-12-22 | |||
| US20130181308A1 | 2013-07-18 | |||
| US20160111594A1 | 2016-04-21 | |||
| CN103268912A | 2013-08-28 | |||
| JP2019522356A | 2019-08-08 |
Attorney, Agent or Firm:
YAMAO, Norihito et al. (JP)
Download PDF: