Title:
NITRIDE SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2014/034762
Kind Code:
A1
Abstract:
Provided is a nitride semiconductor element having low operating voltage and being capable of obtaining a high light emission efficiency. This nitride semiconductor element is characterized by an electron supply layer having an AlxGa1-xN composition (0.01< x ≤ 1), in a nitride semiconductor element having the electron supply layer comprising an n-type semiconductor, the density of n-type impurities being at least 1 × 1019/cm3, and the thickness being at least 0.5 µm. It is desirable that the n-type impurities are silicon (Si).
Inventors:
TSUKIHARA MASASHI (JP)
MIYOSHI KOHEI (JP)
KAWASAKI KOJI (JP)
MIYOSHI KOHEI (JP)
KAWASAKI KOJI (JP)
Application Number:
PCT/JP2013/073106
Publication Date:
March 06, 2014
Filing Date:
August 29, 2013
Export Citation:
Assignee:
USHIO ELECTRIC INC (JP)
International Classes:
H01L33/32; H01L21/205
Foreign References:
| JP2006245555A | 2006-09-14 | |||
| JP2011018869A | 2011-01-27 | |||
| JP2010219269A | 2010-09-30 | |||
| JP2011077344A | 2011-04-14 | |||
| JP2006295162A | 2006-10-26 |
Other References:
JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 43, no. 9A, 2004, pages 5945 - 5950
Attorney, Agent or Firm:
OHI, Masahiko (JP)
Masahiko Oi (JP)
Masahiko Oi (JP)
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