Title:
NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, A METHOD FOR PRODUCING SAME, AND NITRIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/176412
Kind Code:
A1
Abstract:
This nitride semiconductor epitaxial substrate (100) is provided with a Si substrate (101), a nitride semiconductor epitaxial layer formed over the Si substrate (101), and a crystal layer (102) of Si and a Group 3 metal element arranged between the Si substrate (101) and the nitride semiconductor epitaxial layer and including a high concentration of C. The C concentration in the crystal layer (102) is equal to or higher than 1.0×10+21cm-3, and the transition metal element concentration in the crystal layer (102) is equal to or lower than 5.0×10+16cm-3.
Inventors:
MATSUO HISAYOSHI
OKITA HIDEYUKI
HIKITA MASAHIRO
UEMOTO YASUHIRO
YANAGIHARA MANABU
OKITA HIDEYUKI
HIKITA MASAHIRO
UEMOTO YASUHIRO
YANAGIHARA MANABU
Application Number:
PCT/JP2022/000030
Publication Date:
August 25, 2022
Filing Date:
January 04, 2022
Export Citation:
Assignee:
PANASONIC IP MAN CO LTD (JP)
International Classes:
H01L21/20; C23C16/34; C23C16/56; H01L21/205; H01L21/225; H01L21/338; H01L29/778; H01L29/812
Domestic Patent References:
| WO2017002317A1 | 2017-01-05 |
Foreign References:
| JP2010030877A | 2010-02-12 | |||
| JP2012151401A | 2012-08-09 | |||
| JP2018113358A | 2018-07-19 | |||
| JP2011082494A | 2011-04-21 | |||
| JP2003069156A | 2003-03-07 |
Attorney, Agent or Firm:
NII, Hiromori et al. (JP)
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