Title:
NITRIDE SEMICONDUCTOR LASER ELEMENT AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LASER ELEMENT
Document Type and Number:
WIPO Patent Application WO/2020/105362
Kind Code:
A1
Abstract:
This nitride semiconductor laser element according to one embodiment comprises: a single crystal substrate that extends along one direction; a base layer comprising a nitride semiconductor provided on the single crystal substrate; a sheet-like structure that comprises a nitride semiconductor and that is erected on the base layer in a vertical direction with respect to the base layer, the sheet-like structure being configured so that the side surface thereof extends in the longitudinal direction of the single crystal substrate and has a larger surface area than the top surface of the sheet-like structure; a light emitting layer comprising a nitride semiconductor provided on at least the side surface of the sheet-like structure; and a resonator mirror configured from a pair of end faces of the sheet-like structure which oppose each other in the longitudinal direction.
Inventors:
TANGE TAKASHI (JP)
TASAI KUNIHIKO (JP)
TOKUDA KOTA (JP)
TASAI KUNIHIKO (JP)
TOKUDA KOTA (JP)
Application Number:
PCT/JP2019/041860
Publication Date:
May 28, 2020
Filing Date:
October 25, 2019
Export Citation:
Assignee:
SONY CORP (JP)
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L21/205; H01S5/343; H01S5/042; H01S5/22
Foreign References:
| JP2009059740A | 2009-03-19 | |||
| JPH10215029A | 1998-08-11 | |||
| KR20110117856A | 2011-10-28 | |||
| US20140312301A1 | 2014-10-23 |
Attorney, Agent or Firm:
TSUBASA PATENT PROFESSIONAL CORPORATION (JP)
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