Title:
NITRIDE SEMICONDUCTOR LASER ELEMENT
Document Type and Number:
WIPO Patent Application WO/2017/017928
Kind Code:
A1
Abstract:
In the present invention, a nitride semiconductor laser element has an electron barrier layer between a p-side light guide layer and a p-type cladding layer. The electron barrier layer has a higher band gap energy than the p-type cladding layer. The p-side light guide layer comprises In-free AlxGa1-xN (0 ≤ x < 1). In addition, the thickness dn of an n-side light guide layer and the thickness dp of the p-side light guide layer satisfy the relationships dp ≥ 0.25 μm and dn ≥ dp.
Inventors:
KAWAGUCHI MASAO
IMAFUJI OSAMU
NOZAKI SHINICHIRO
HAGINO HIROYUKI
IMAFUJI OSAMU
NOZAKI SHINICHIRO
HAGINO HIROYUKI
Application Number:
PCT/JP2016/003378
Publication Date:
February 02, 2017
Filing Date:
July 19, 2016
Export Citation:
Assignee:
PANASONIC CORP (JP)
International Classes:
H01S5/343
Foreign References:
| JP2010272593A | 2010-12-02 | |||
| JP2012018963A | 2012-01-26 | |||
| JP2011096870A | 2011-05-12 | |||
| JP2012209352A | 2012-10-25 | |||
| JP2010153430A | 2010-07-08 |
Attorney, Agent or Firm:
TOKUDA, Yoshiaki et al. (JP)
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