Title:
NITRIDE SEMICONDUCTOR LASER ELEMENT
Document Type and Number:
WIPO Patent Application WO/2019/130655
Kind Code:
A1
Abstract:
A nitride semiconductor laser element (100) is provided with a first cladding layer (102), first light guide layer (120), active layer (130), second light guide layer (140), and second cladding layer (105). The active layer (130) has a single quantum well structure, the first light guide layer (120) is provided with a first adjacent layer (120a) adjacent to the active layer (130), and a first separated layer (120b) separated from the active layer (130), and the second light guide layer (140) is provided with a second adjacent layer (140a) adjacent to the active layer (130), and a second separated layer (140b) separated from the active layer (130). The first light guide layer (120) and the second light guide layer (140) are formed of an InxGa1-xN layer (0≤x<1) having a refractive index that is smaller than that of the active layer (130), the first adjacent layer (120a) has an In composition ratio that is larger than that of the first separated layer (120b), and the second adjacent layer (140a) has an In composition ratio that is larger than that of the second separated layer (140b).
Inventors:
KAWAGUCHI MASAO
Application Number:
PCT/JP2018/031861
Publication Date:
July 04, 2019
Filing Date:
August 29, 2018
Export Citation:
Assignee:
PANASONIC CORP (JP)
International Classes:
H01S5/343; H01S5/22
Domestic Patent References:
| WO2013061651A1 | 2013-05-02 |
Foreign References:
| JP2014022506A | 2014-02-03 | |||
| JPH11340580A | 1999-12-10 | |||
| US20170155230A1 | 2017-06-01 | |||
| US9042416B1 | 2015-05-26 | |||
| JP2012138508A | 2012-07-19 | |||
| JP2010177651A | 2010-08-12 | |||
| JP2004140370A | 2004-05-13 |
Attorney, Agent or Firm:
NII, Hiromori et al. (JP)
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