NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME

WIPO Patent Application WO/2010/029720

A1

Provided is a nitride semiconductor light emitting element having a nitride semiconductor laminated structure (50).  The nitride semiconductor laminated structure (50) includes an active layer (32) which includes an AlaInbGacN crystal layer (a+b+c=1, a≥ 0, b≥0, c≥0), an AldGaeN overflow suppressing layer (36) (d+e=1, d>0, e≥0), and an AlfGagN layer (38) (f+g=1, f≥0, g≥0, f