Title:
NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2010/079567
Kind Code:
A1
Abstract:
Disclosed is a nitride semiconductor light-emitting element in which the contact resistance generated between an n-contact layer and an n-side electrode is reduced effectively while maintaining an external quantum efficiency. Also disclosed is a method for manufacturing the nitride semiconductor light-emitting element with high efficiency.
Specifically disclosed is a nitride semiconductor light-emitting element characterized by comprising: a semiconductor laminate comprising a n-type laminate, a light-emitting layer and a p-type laminate; an n-side electrode; and a p-side electrode, wherein the n-type laminate comprises an n-contact layer comprising an AlxGa1-xN material [wherein 0.7≤x≤1.0] and an n-clad layer arranged on the n-contact layer, and wherein an intermediate layer comprising an AlyGa1-yN material [wherein 0≤y≤0.5] is arranged on a part of the surface of the n-contact layer which is exposed on the side facing the light-emitting layer.
Inventors:
OHTA YUTAKA (JP)
OOSHIKA YOSHIKAZU (JP)
OOSHIKA YOSHIKAZU (JP)
Application Number:
PCT/JP2009/007214
Publication Date:
July 15, 2010
Filing Date:
December 24, 2009
Export Citation:
Assignee:
DOWA ELECTRONICS MATERIALS CO (JP)
OHTA YUTAKA (JP)
OOSHIKA YOSHIKAZU (JP)
OHTA YUTAKA (JP)
OOSHIKA YOSHIKAZU (JP)
International Classes:
H01L33/40; H01L33/32
Foreign References:
| JP2006066556A | 2006-03-09 | |||
| JP2008140917A | 2008-06-19 | |||
| JP2008171941A | 2008-07-24 | |||
| JP2002141552A | 2002-05-17 | |||
| JP2004335559A | 2004-11-25 | |||
| JP2006295132A | 2006-10-26 |
Other References:
See also references of EP 2378574A4
Attorney, Agent or Firm:
SUGIMURA, KENJI (JP)
Kenji Sugimura (JP)
Kenji Sugimura (JP)
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