NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT

Title:

NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT

Document Type and Number:

WIPO Patent Application WO/2015/145899

Kind Code:

A1

Abstract:

This nitride semiconductor light-emitting element (1) is provided with a first conductivity-type nitride semiconductor layer, a second conductivity-type nitride semiconductor layer which is formed on the first conductivity-type nitride semiconductor layer such that the periphery of the first conductivity-type nitride semiconductor layer is exposed, a first electrode (17a) which is formed in a first region of the second conductivity-type nitride semiconductor layer with a first current non-injection layer (13a) interposed therebetween, a first current diffusion layer (14a) which is formed between the first current non-injection layer (13a) and the first electrode (17a), a second electrode (17b) which is formed in a second region of the second conductivity-type nitride semiconductor layer with a second current non-injection layer (13b) interposed therebetween, a second current diffusion layer (14b) which is formed in the second region and on the second current non-injection layer (13b), and an extending part (17c) which extends from the first electrode (17a) to the exposed first conductivity-type nitride semiconductor layer.

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Inventors:

OHMI SUSUMU
KURISU TAKASHI
NAGATA MASAYUKI

Application Number:

PCT/JP2014/083549

Publication Date:

October 01, 2015

Filing Date:

December 18, 2014

Export Citation:

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Assignee:

SHARP KK (JP)

International Classes:

H01L33/14; H01L33/38

Foreign References:

JP2000114595A	2000-04-21
JP2010232642A	2010-10-14
JP2008192710A	2008-08-21
JP2011139037A	2011-07-14
JPH10135519A	1998-05-22

Attorney, Agent or Firm:

SANO PATENT OFFICE (JP)
Patent business corporation Sano patent firm (JP)

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