Title:
NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/180952
Kind Code:
A1
Abstract:
A method for manufacturing a nitride semiconductor light-emitting element (1), in which a semiconductor layer laminated substrate (2) on which a semiconductor layer laminate (200A) is formed is divided to form a bar-form substrate (3), and a segment element (4) is produced by dividing the bar-shaped substrate (3) along the longitudinal division line (YL), the semiconductor layer laminate (200A) having a plurality of waveguides (201) extending in the Y-axis direction, wherein: the width of one end part of a waveguide (201) of the segment element (4) is different from the width of the other end part; and in the semiconductor layer laminated substrate (2), which has a first element forming region (301) and a second element forming region (302) that are disposed in positions offset in the X-axis direction and are adjacent in the X-axis direction, two longitudinal division lines (YL) sandwiching the first element forming region (301) and two longitudinal division lines (YL) sandwiching the second element forming region (302) are skewed in the X-axis direction.
Inventors:
IKEDA DAISUKE
SHIMIZU GEN
KITAGAWA HIDEO
TAKAYAMA TORU
ONO MASAYUKI
SAMONJI KATSUYA
TOMITA OSAMU
KAWASAKI SATOKO
SHIMIZU GEN
KITAGAWA HIDEO
TAKAYAMA TORU
ONO MASAYUKI
SAMONJI KATSUYA
TOMITA OSAMU
KAWASAKI SATOKO
Application Number:
PCT/JP2018/011598
Publication Date:
October 04, 2018
Filing Date:
March 23, 2018
Export Citation:
Assignee:
PANASONIC IP MAN CO LTD (JP)
International Classes:
H01S5/343; H01L21/301; H01S5/02
Foreign References:
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| US9209596B1 | 2015-12-08 |
Attorney, Agent or Firm:
KAMATA Kenji et al. (JP)
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