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Title:
NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2022/210188
Kind Code:
A1
Abstract:
The present invention provides a nitride semiconductor light-emitting element that can suppress current concentration without an increase in drive voltage or manufacturing steps. A nitride semiconductor light-emitting element (1) is provided with: n-type electrodes (15a to 15e) disposed with interfaces of contact with a first nitride semiconductor layer (11) lying in first contact regions (151a to 151e) extending in a first direction (L1); and p-type electrodes (16a, 16c) with interfaces of contact with a second nitride semiconductor layer (13) lying in second contact regions (161a, 161c) extending in the first direction (L1). The length of line segments (151a3, 151b1, 151c3, 151d1) of outer peripheral lines of the first contact regions (151a to 151e) parallel to the first direction (L1) is shorter than the length of line segments (161a1, 161a3, 161c1, 161c3) of outer peripheral lines of the second contact regions (161a, 161c) parallel to the first direction (L1) and opposing the first contact regions (151a to 151d).

Inventors:
YAMADA TOMOYA (JP)
Application Number:
PCT/JP2022/013643
Publication Date:
October 06, 2022
Filing Date:
March 23, 2022
Export Citation:
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Assignee:
ASAHI CHEMICAL IND (JP)
International Classes:
H01L33/32; H01L21/28; H01L29/41; H01L29/417; H01L33/38
Foreign References:
JP2013048199A2013-03-07
JP2015050256A2015-03-16
JP2018139291A2018-09-06
JP2020167321A2020-10-08
US20190326475A12019-10-24
JP2002319704A2002-10-31
JP2008277358A2008-11-13
JP2014143394A2014-08-07
US20150076536A12015-03-19
JP2000277846A2000-10-06
Attorney, Agent or Firm:
TANAKA Hidetetsu et al. (JP)
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