Title:
NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2023/276833
Kind Code:
A1
Abstract:
A nitride semiconductor light-emitting element (10) comprises: a nitride semiconductor (100) that has two resonator surfaces (160, 161) facing each other; and a dielectric multilayer film layered on at least one of the two resonator surfaces (160, 161). For example, a dielectric multilayer film (200) layered on the resonator surface (160) has a dielectric film (201) layered on the resonator surface (160) and a dielectric film (202) layered on the dielectric film (201). The dielectric film (201) comprises aluminum oxynitride. The dielectric film (202) comprises aluminum oxide. The dielectric film (201) is a crystal film. At least one element from among yttrium and lanthanum is added to the dielectric film (201). At least one element from among yttrium and lanthanum is added to the dielectric film (202).
Inventors:
YOSHIDA SHINJI
KITAGAWA HIDEO
OKAGUCHI TAKAHIRO
KITAGAWA HIDEO
OKAGUCHI TAKAHIRO
Application Number:
PCT/JP2022/024936
Publication Date:
January 05, 2023
Filing Date:
June 22, 2022
Export Citation:
Assignee:
NUVOTON TECH CORPORATION JAPAN (JP)
International Classes:
H01S5/028
Domestic Patent References:
| WO2019159449A1 | 2019-08-22 | |||
| WO2009147853A1 | 2009-12-10 | |||
| WO2009147853A1 | 2009-12-10 |
Foreign References:
| JP2008147363A | 2008-06-26 | |||
| US20130107534A1 | 2013-05-02 | |||
| JP4799339B2 | 2011-10-26 | |||
| JP5042609B2 | 2012-10-03 | |||
| JP2011119540A | 2011-06-16 |
Attorney, Agent or Firm:
NII, Hiromori et al. (JP)
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