Title:
NITRIDE SEMICONDUCTOR MULTILAYER SUBSTRATE, NITRIDE SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR MULTILAYER SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2015/005083
Kind Code:
A1
Abstract:
A nitride semiconductor multilayer substrate (111) includes a Si substrate (101) having, as the principal surface, a surface inclined at an off angle of 0.11-0.50º in the (011) direction from the (111) plane, and at least one nitride semiconductor layer (102, 103) epitaxially grown on the Si substrate (101).
Inventors:
OGAWA ATSUSHI
TERAGUCHI NOBUAKI
ITO NOBUYUKI
INOUE YUSHI
OKAZAKI MAI
TERAGUCHI NOBUAKI
ITO NOBUYUKI
INOUE YUSHI
OKAZAKI MAI
Application Number:
PCT/JP2014/066197
Publication Date:
January 15, 2015
Filing Date:
June 18, 2014
Export Citation:
Assignee:
SHARP KK (JP)
International Classes:
H01L21/20; H01L21/205; H01L21/338; H01L29/778; H01L29/812; H01L33/02
Foreign References:
| JP2012015304A | 2012-01-19 |
Attorney, Agent or Firm:
SAMEJIMA, Mutsumi et al. (JP)
Mutsumi Sameshima (JP)
Mutsumi Sameshima (JP)
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