Title:
NITRIDE SEMICONDUCTOR PHOTOCATALYST THIN FILM AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR PHOTOCATALYST THIN FILM
Document Type and Number:
WIPO Patent Application WO/2021/240590
Kind Code:
A1
Abstract:
A nitride semiconductor photocatalyst thin film 1 according to this embodiment demonstrates a catalyst function when irradiated with light, and causes an oxidation/reduction reaction. The nitride semiconductor photocatalyst thin film 1 has: a conductive substrate 11; a semiconductor thin film 12 that is positioned on a front surface of the substrate; a first catalyst layer 13 that forms an ohmic junction in a section of a front surface of the semiconductor thin film 12; a second catalyst layer 14 that forms a Schottky junction in a section of the front surface of the semiconductor thin film 12; and a protective layer 15 that is positioned so as to cover a back surface of the substrate 11 and side surfaces of the substrate 11 and the semiconductor thin film 12. The substrate 11 and the semiconductor thin film 12 include the same elements and comprise the same crystal structure.
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Inventors:
UZUMAKI YUYA (JP)
SATO SAYUMI (JP)
ONO YOKO (JP)
KOMATSU TAKESHI (JP)
SATO SAYUMI (JP)
ONO YOKO (JP)
KOMATSU TAKESHI (JP)
Application Number:
PCT/JP2020/020505
Publication Date:
December 02, 2021
Filing Date:
May 25, 2020
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE (JP)
International Classes:
B01J35/02; B01J27/24
Foreign References:
| JP2016043304A | 2016-04-04 | |||
| JP2014208324A | 2014-11-06 | |||
| JP2007239048A | 2007-09-20 | |||
| JP2018090863A | 2018-06-14 | |||
| JP2017121598A | 2017-07-13 | |||
| JP2010247109A | 2010-11-04 | |||
| JP2018089604A | 2018-06-14 | |||
| JP2018204044A | 2018-12-27 |
Attorney, Agent or Firm:
MIYOSHI Hidekazu et al. (JP)
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