Title:
NITRIDE SEMICONDUCTOR PHOTOELECTRODE AND PRODUCTION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/238387
Kind Code:
A1
Abstract:
A nitride semiconductor photoelectrode comprising a conductive thin film 2 that is formed upon a substrate 1 and a polycrystalline nitride semiconductor thin film 3 that is formed upon the conductive thin film 2 and has a lattice strain of no higher than 0.35%, wherein an oxidation-reduction reaction is generated by directing light at the surface of the polycrystalline nitride semiconductor thin film 3 while in an aqueous solution.
Inventors:
SATO SAYUMI (JP)
UZUMAKI YUYA (JP)
KONO AKIHIRO (JP)
KOMATSU TAKESHI (JP)
UZUMAKI YUYA (JP)
KONO AKIHIRO (JP)
KOMATSU TAKESHI (JP)
Application Number:
PCT/JP2022/023463
Publication Date:
December 14, 2023
Filing Date:
June 10, 2022
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE (JP)
International Classes:
C25B11/052; C25B11/087
Domestic Patent References:
| WO2012157193A1 | 2012-11-22 | |||
| WO2002062470A1 | 2002-08-15 | |||
| WO2013133338A1 | 2013-09-12 |
Foreign References:
| JP2006069804A | 2006-03-16 | |||
| JP2007022858A | 2007-02-01 | |||
| JP2018162188A | 2018-10-18 |
Attorney, Agent or Firm:
MIYOSHI Hidekazu et al. (JP)
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