NITRIDE SEMICONDUCTOR PHOTOELECTRODE - NIPPON TELEGRAPH & TELEPHONE

Title:

NITRIDE SEMICONDUCTOR PHOTOELECTRODE

Document Type and Number:

WIPO Patent Application WO/2023/238394

Kind Code:

A1

Abstract:

A nitride semiconductor photoelectrode comprising a conductive thin film that is formed upon a substrate, a polycrystalline nitride semiconductor thin film that is formed upon the conductive thin film, and a promoter layer that is formed upon the polycrystalline nitride semiconductor thin film, wherein the promoter layer causes water oxidation to occur on the promoter layer surface.

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Inventors:

SATO SAYUMI (JP)
UZUMAKI YUYA (JP)
KONO AKIHIRO (JP)
KOMATSU TAKESHI (JP)

Application Number:

PCT/JP2022/023496

Publication Date:

December 14, 2023

Filing Date:

June 10, 2022

Export Citation:

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Assignee:

NIPPON TELEGRAPH & TELEPHONE (JP)

International Classes:

C25B11/087

Foreign References:

JP2015098644A	2015-05-28
JP2020090690A	2020-06-11

Attorney, Agent or Firm:

MIYOSHI Hidekazu et al. (JP)

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